BC303-4 Datasheet, Equivalent, Cross Reference Search
Type Designator: BC303-4
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.85 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39
BC303-4 Transistor Equivalent Substitute - Cross-Reference Search
BC303-4 Datasheet (PDF)
9.1. Size:128K cdil
bc303 bc304.pdf
bc303 bc304.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EXPITAXIAL PLANAR SILICON TRANSISTORS BC303, BC304TO-39Metal Can PackagePNP SILICON LOW-AND MEDIUM POWER TRANSISTORS.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BC303 BC304 UNITSVCEOCollector Emitter Voltage 60 45 VVCBOCollector Base Voltage 85
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BDT41B
