BC307AP Datasheet, Equivalent, Cross Reference Search
Type Designator: BC307AP
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 125
Noise Figure, dB: -
Package: TO92
BC307AP Transistor Equivalent Substitute - Cross-Reference Search
BC307AP Datasheet (PDF)
bc307 bc308 bc309.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC307/DAmplifier TransistorsBC307,B,CPNP SiliconBC308CCOLLECTORBC309B12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC307 308C 309Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 25 25 VdcCollectorBase Voltage VCBO 50 30 30 VdcE
bc307 bc307b 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D186BC307; BC307BPNP general purpose transistors1997 Mar 07Product specificationFile under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistors BC307; BC307BFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 base
bc307 bc308 bc309.pdf
BC307/308/309Switching and Amplifier Applications Low Noise: BC309TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC307 -50 V: BC308/309 -30 VVCEO Collector-Emitter Voltage: BC307 -45 V: BC308/309 -25 VVEBO Emitter-Base Volta
bc307.pdf
BC307/308/309 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE: BC309 TO-92ABSOLUTE MAXIMUM RATINGS (T =25C)A Characteristic Symbol Rating UnitCollector-Emitter Voltage VCES: BC307 -50 V: BC308/309 -30 VCollector-Emitter Voltage VCEO : BC307 -45 V: BC308/309 -25 VEmitter-Base Voltage VEBO -5 VCollector Current (DC) IC mA-100Co
bc307b.pdf
BC307BAmplifier TransistorsPNP SiliconFeatures This is a Pb-Free Device*http://onsemi.comCOLLECTOR1MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO -45 VdcCollector - Base Voltage VCBO -50 Vdc3EMITTEREmitter - Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -100 mAdcTotal Device Dissipation @ TA = 25C PD 350 mWDe
bc307 bc308 bc309 a b c.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, CBC 308, A, B, CBC 309, A, B, CTO-92Plastic PackageGeneral Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio FrequenciesABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BC307
bc307 bc308 bc309.pdf
SEMICONDUCTOR BC307/8/9TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.LOW NOISE AMPLIFIER APPLICATION. B CFEATURES High Voltage : BC307 VCEO=-45V.Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.)N DIM MILLIMETERS(VCE=-6V, IC=-0.1mA, f=1kHz).A 4.70 MAXEKFor Complementary With NPN type BC237/238/239. G B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.2
bc177 bc178 bc179 bc257 bc258 bc259 bc307 bc308 bc309 bc320 bc321 bc322.pdf
bc307 bc308 bc309.pdf
BC307/308/309(PNP)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Emitter Voltage BC307 -45 VCEO V BC308/309 -25 Emitter-Base Voltage BC307 -6 VEBO V BC308/309 -5 Collector Current -Continuous -0.1 IC A Collec
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
