BC307B-92 Datasheet, Equivalent, Cross Reference Search
Type Designator: BC307B-92
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 240
Noise Figure, dB: -
Package: TO92
BC307B-92 Transistor Equivalent Substitute - Cross-Reference Search
BC307B-92 Datasheet (PDF)
bc307 bc307b 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D186BC307; BC307BPNP general purpose transistors1997 Mar 07Product specificationFile under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistors BC307; BC307BFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 base
bc307b.pdf
BC307BAmplifier TransistorsPNP SiliconFeatures This is a Pb-Free Device*http://onsemi.comCOLLECTOR1MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO -45 VdcCollector - Base Voltage VCBO -50 Vdc3EMITTEREmitter - Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -100 mAdcTotal Device Dissipation @ TA = 25C PD 350 mWDe
bc307 bc308 bc309.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC307/DAmplifier TransistorsBC307,B,CPNP SiliconBC308CCOLLECTORBC309B12BASE3EMITTER1MAXIMUM RATINGS23BC
bc307 bc308 bc309.pdf
BC307/308/309Switching and Amplifier Applications Low Noise: BC309TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC307 -50 V: BC308/309 -30 VVCEO Collector-Emitter Voltage: BC307 -45 V: BC308/309 -25 VVEBO Emitter-Base Volta
bc307.pdf
BC307/308/309 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE: BC309 TO-92ABSOLUTE MAXIMUM RATINGS (T =25C)A Characteristic Symbol Rating UnitCollector-Emitter Voltage VCES: BC307 -50 V: BC308/309 -30 VCollector-Emitter Voltage VCEO : BC307 -45 V: BC308/309 -25 VEmitter-Base Voltage VEBO -5 VCollector Current (DC) IC mA-100Co
bc307 bc308 bc309 a b c.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, CBC 308, A, B, CBC 309, A, B, CTO-92Plastic PackageGeneral Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio FrequenciesABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BC307
bc307 bc308 bc309.pdf
SEMICONDUCTOR BC307/8/9TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.LOW NOISE AMPLIFIER APPLICATION. B CFEATURES High Voltage : BC307 VCEO=-45V.Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.)N DIM MILLIMETERS(VCE=-6V, IC=-0.1mA, f=1kHz).A 4.70 MAXEKFor Complementary With NPN type BC237/238/239. G B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.2
bc177 bc178 bc179 bc257 bc258 bc259 bc307 bc308 bc309 bc320 bc321 bc322.pdf
bc307 bc308 bc309.pdf
BC307/308/309(PNP)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Emitter Voltage BC307 -45 VCEO V BC308/309 -25 Emitter-Base Voltage BC307 -6 VEBO V BC308/309 -5 Collector Current -Continuous -0.1 IC A Collec
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , B772 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
