All Transistors. BC337A-25 Datasheet

 

BC337A-25 Datasheet, Equivalent, Cross Reference Search

Type Designator: BC337A-25

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 18 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO92

BC337A-25 Transistor Equivalent Substitute - Cross-Reference Search

 

BC337A-25 Datasheet (PDF)

9.1. bc337 bc338.pdf Size:119K _motorola

BC337A-25
BC337A-25

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC337/DAmplifier TransistorsNPN SiliconBC337,-16,-25,-40BC338,-16,-25,-40COLLECTOR12BASE3EMITTER1MAXIMUM RATING

9.2. bc337 bc338 1.pdf Size:163K _motorola

BC337A-25
BC337A-25

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC337/DAmplifier TransistorsNPN SiliconBC337,-16,-25,-40BC338,-16,-25,-40COLLECTOR12BASE3EMITTER1MAXIMUM RATING

 9.3. bc817 bc817w bc337.pdf Size:236K _philips

BC337A-25
BC337A-25

BC817; BC817W; BC33745 V, 500 mA NPN general-purpose transistorsRev. 06 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors.Table 1. Product overviewType number Package PNP complementNXP JEITABC817 SOT23 - BC807BC817W SOT323 SC-70 BC807WBC337[1] SOT54 (TO-92) SC-43A BC327[1] Also available in SOT54A and SOT54 va

9.4. bc337 3.pdf Size:52K _philips

BC337A-25
BC337A-25

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC337NPN general purpose transistor1999 Apr 15Product specificationSupersedes data of 1997 Mar 10Philips Semiconductors Product specificationNPN general purpose transistor BC337FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 baseAPPLICATIONS3 collector

 9.5. bc337-25 bc337-40.pdf Size:66K _st

BC337A-25
BC337A-25

BC337-25BC337-40SMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAOrdering Code Marking Package / ShipmentBC337-25 BC337-25 TO-92 / BulkBC337-25-AP BC337-25 TO-92 / AmmopackBC337-40 BC337-40 TO-92 / BulkBC337-40-AP BC337-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTORS TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLYTO-92 TO-92 THE PNP COMPLEMENTARY TYPES

9.6. bc337-16 bc337-25.pdf Size:15K _fairchild_semi

BC337A-25

BC337-16BC337-25E TO-92BCNPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourced fromProcess 12. See TN3019A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCES Collector-Base Voltage

9.7. bc337 bc338.pdf Size:27K _fairchild_semi

BC337A-25
BC337A-25

BC337/338Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC327/BC328TO-9211. Collector 2. Base 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC337 50 V: BC338 30 VVCEO Collector-Emitter Volt

9.8. bc337 338 1.pdf Size:179K _vishay

BC337A-25
BC337A-25

BC337 and BC338Vishay Semiconductorsformerly General SemiconductorSmall Signal Transistors (NPN)TO-226AA (TO-92)Features NPN Silicon Epitaxial Planar Transistors for switching0.142 (3.6)0.181 (4.6)and amplifier applications. Especially suited for AF-driverstages and low power output stages. These types are also available subdivided into threegroups -16, -25, and -4

9.9. bc337-a bc338.pdf Size:65K _central

BC337A-25
BC337A-25

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.10. bc337-16bk bc337-25bk bc337-40bk bc338-16bk bc338-25bk bc338-40bk.pdf Size:88K _diodes

BC337A-25
BC337A-25

BC337-xBK / BC338-xBKBC337-xBK / BC338-xBKGeneral Purpose Si-Epitaxial Planar TransistorsNPN NPNSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2010-05-270.1 Power dissipation 625 mW4.6VerlustleistungPlastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gPlastic material has UL classification 94V-0C B EGehusematerial UL9

9.11. bc337-16-25-40 bc338-16-25-40.pdf Size:234K _mcc

BC337A-25
BC337A-25

MCCBC337-16/25/40TM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsBC338-16/25/40CA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) Transistors Lead Free Fin

9.12. bc337-25-40.pdf Size:141K _onsemi

BC337A-25
BC337A-25

BC337, BC337-25,BC337-40Amplifier TransistorsNPN Siliconhttp://onsemi.comFeatures These are Pb-Free DevicesCOLLECTOR12MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO 45 Vdc3EMITTERCollector - Base Voltage VCBO 50 VdcEmitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 800 mAdcTotal Device Dissipation @ TA = 25

9.13. sbc337.pdf Size:192K _auk

BC337A-25
BC337A-25

SBC337NPN Silicon TransistorDescriptions PIN Connection High current application C Switching application BFeatures Suitable for AF-Driver stage and low E power output stages Complementary pair with SBC327 TO-92 Ordering Information Type NO. Marking Package Code SBC337 SBC337 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol R

9.14. bc337~bc338.pdf Size:362K _secos

BC337A-25
BC337A-25

BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1112Base 222J3Emitter 333CLASSIFICATION OF hFE A DProduct-Rank BC337-16 BC337-25 BC337-40 Millimeter REF. BMin. Max. A 4.40 4.70 Product-Rank B

9.15. bc327 bc328 bc337 bc338.pdf Size:117K _cdil

BC337A-25
BC337A-25

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC327/A BC328 PNPSILICON PLANAR EPITAXIAL TRANSISTORSBC337/A BC338 NPNTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"EBCGeneral Purpose Transistors Best Suited for use in Driver and Output Stages of Audio AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C)

9.16. bc337.pdf Size:338K _kec

BC337A-25
BC337A-25

SEMICONDUCTOR BC337TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. B CFEATURESHigh Current : IC=800mA.DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).N DIM MILLIMETERSFor Complementary with PNP type BC327.A 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_H J 14.

9.17. bc337 bc338.pdf Size:172K _lge

BC337A-25
BC337A-25

BC337/338(NPN)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 V IC Col

9.18. bc337 bc338.pdf Size:256K _wietron

BC337A-25
BC337A-25

BC337/BC338NPN General Purpose TransistorCOLLECTOR1P b Lead(Pb)-FreeTO-922BASE13 23EMITTERMaximum Ratings(TA=25C unless otherwise noted)Rating Symbol BC337 BC338 UnitVCBOCollector-Base voltage50 30 VVCEOVCollector-Emitter voltage 45 25VEBOVEmitter-Base voltage5.0 5.0Collector Current Continuous lCmA800Total Device DissipationPD625 mW/

9.19. bc337m.pdf Size:808K _blue-rocket-elect

BC337A-25
BC337A-25

BC337M(BR3DG337M)Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , BC327M(BR3CG327M)High current, complementary pair with BC327M(BR3CG327M). / Applications General power amplifier and switching.

9.20. bc337 bc338.pdf Size:78K _first_silicon

BC337A-25

SEMICONDUCTOR BC337/338 TECHNICAL DATABC337/BC338 TRANSISTOR (NPN) B CFEATURESHigh Current : IC=800mA.DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).DIM MILLIMETERSFor Complementary with PNP type BC327.A 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HJ 14.00 + 0.50L 2.30Symb

9.21. bc337.pdf Size:856K _kexin

BC337A-25
BC337A-25

DIP Type TransistorsNPN TransistorsBC337 (KC337)TO-92Unit: mm+0.254.58 0.15 Features Collector Current Capability IC=0.5A 0.46 0.10 Collector Emitter Voltage VCEO=45VC Complement to BC327.+0.101.27TYP 1.27TYP 0.38 0.051 2 3B [1.27 0.20] [1.27 0.20]3.60 0.20E 1. Emitter2. Base(R2.29)3. Collector Absolute Maximum Ratings Ta = 25

9.22. bc337.pdf Size:191K _inchange_semiconductor

BC337A-25
BC337A-25

isc Silicon NPN Transistor BC337DESCRIPTIONLow VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor AF-Driver stages and low power output stages.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBOV Collector-Emitter Voltage 45 VCEOV Emitter-Base Voltage 5 VEBOI Col

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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