2N2695 Specs and Replacement
Type Designator: 2N2695
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO46
2N2695 Substitution
- BJT ⓘ Cross-Reference Search
2N2695 datasheet
2N2696CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 25V A = (0.04 0.004... See More ⇒
Detailed specifications: 2N268, 2N268A, 2N269, 2N2691, 2N2691A, 2N2692, 2N2693, 2N2694, B647, 2N2696, 2N2697, 2N2698, 2N2699, 2N269A, 2N27, 2N270, 2N2706
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