All Transistors. BC517S Datasheet

 

BC517S Datasheet, Equivalent, Cross Reference Search

Type Designator: BC517S

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 33000

Noise Figure, dB: -

Package: TO92

BC517S Transistor Equivalent Substitute - Cross-Reference Search

 

BC517S Datasheet (PDF)

5.1. bc517rev.pdf Size:206K _motorola

BC517S
BC517S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC517/D Darlington Transistors NPN Silicon BC517 COLLECTOR 1 BASE 2 EMITTER 3 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 17 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCES 30 Vdc CollectorBase Voltage VCB 40 Vdc EmitterBase Voltage VEB 10 Vdc Collector Current Continuous IC 1.0 Adc Total Po

5.2. bc517 4.pdf Size:49K _philips

BC517S
BC517S

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2 base 3 c

 5.3. bc517.pdf Size:43K _philips

BC517S
BC517S

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2 base 3 c

5.4. bc517.pdf Size:27K _fairchild_semi

BC517S
BC517S

January 2005 BC517 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Bas

 5.5. bc517.pdf Size:35K _kec

BC517S
BC517S

SEMICONDUCTOR BC517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. B C N DIM MILLIMETERS A 4.70 MAX E K MAXIMUM RATING (Ta=25 ) G B 4.80 MAX C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VE

5.6. hbc517.pdf Size:45K _hsmc

BC517S
BC517S

Spec. No. : HA200217 HI-SINCERITY Issued Date : 2002.09.01 Revised Date : 2005.02.04 MICROELECTRONICS CORP. Page No. : 1/4 HBC517 NPN EPITAXIAL PLANAR TRANSISTOR Description General Purpose High Darlington Transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ..............................................................................................

5.7. bc517a3.pdf Size:263K _cystek

BC517S
BC517S

Spec. No. : C214A3-A Issued Date : 2007.06.25 CYStech Electronics Corp. Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BC517A3 Description • The BC517A3 is a darlington amplifier transistor • Pb-free package Symbol Outline BC517A3 TO-92 C B E B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter S

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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