BC546BP pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BC546BP Specs and Replacement

Type Designator: BC546BP

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 65 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 1.7 pF

Forward Current Transfer Ratio (hFE), MIN: 240

Noise Figure, dB: -

Package: TO92

BC546BP Substitution

- BJT ⓘ Cross-Reference Search

BC546BP datasheet

8.1. Size:314K onsemi

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

8.2. Size:72K onsemi

bc546b bc547a-b-c bc548b-c.pdf pdf_icon

BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc BC546 65 3 BC547 45 EMITTER BC548 30 Collector - Base Voltage VCBO Vdc BC546 80 BC547 50 BC548 30 TO-92 Emitter - Base Voltage VEBO 6.0 Vdc CASE 2... See More ⇒

8.3. Size:377K taiwansemi

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BC546A/B/C - BC550A/B/C Taiwan Semiconductor 500mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 30-80 V High surge current capability VCEO 30-65 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free accordi... See More ⇒

8.4. Size:1554K lrc

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