BC556A Datasheet, Equivalent, Cross Reference Search

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BC556xBK ... BC559xBKBC556xBK ... BC559xBKGeneral Purpose Si-Epitaxial PlanarTransistorsPNP PNPSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2009-12-070.1Power dissipation Verlustleistung 500 mW4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gC B EPlastic material has UL classification 94V-0Gehusematerial

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC556/DAmplifier TransistorsBC556,BPNP SiliconBC557A,B,CCOLLECTORBC558B12BASE3EMITTERMAXIMUM RATINGS12BC BC BC3556 557 558Rating Symbol UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 65 45 30 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 80 50 30 Vdc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC556/DAmplifier TransistorsBC556,BPNP SiliconBC557A,B,CCOLLECTORBC558B12BASE3EMITTERMAXIMUM RATINGS12BC BC BC3556 557 558Rating Symbol UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 65 45 30 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 80 50 30 Vdc

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC556; BC557PNP general purpose transistors1999 Apr 15Product specificationSupersedes data of 1997 Mar 27Philips Semiconductors Product specificationPNP general purpose transistors BC556; BC557FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 emitter2 baseAPPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186BC556; BC557PNP general purpose transistorsProduct data sheet 2004 Oct 11Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetPNP general purpose transistors BC556; BC557FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 emitter2 baseAPPLICATIONS3 colle

BC556/557/558/559/560Switching and Amplifier High Voltage: BC556, VCEO= -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC556 -80 V: BC557/560 -50 V: BC558/559 -30 V

BC556B, BC557A, B, C,BC558BAmplifier TransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGS 2BASERating Symbol Value UnitCollector - Emitter Voltage VCEO Vdc3BC556 -65EMITTERBC557 -45BC558 -30Collector - Base Voltage VCBO VdcBC556 -80BC557 -50BC558 -30TO-92Emitter - Base Voltage VEBO -5.0 Vdc CASE

SBC556SemiconductorSemiconductorPNP Silicon TransistorDescriptions General purpose application Switching applicationFeatures High voltage : VCEO=-55V Complementary pair with SBC546Ordering InformationType NO. Marking Package Code SBC556 SBC556 TO-92Outline Dimensions unit : mm3.450.14.50.12.250.10.40.022.060.11.27 Typ.2.54 Typ.

BC556, B, CBC557, A, B, CElektronische BauelementeBC558, A, B, CRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-free TO-92PNP Transistor FEATURES Power dissipation PCM: 0.625 W (Tamb=25) Collector current ICM: - 0.1 A 1 Collector-base voltage 23 VCBO: BC556 -80 V BC557 -50 V 1 2 3 BC558 -30 V Operating and storage junction temp

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORSBC557, A, B, CBC558, A, B, CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with EB "T"CAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC556 BC557 BC558 UNITSCollector Emi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 BC556/BC557/BC558 TRANSISTOR (PNP) FEATURES High Voltage1. COLLECTOR Complement to BC546,BC547,BC548 2. BASE 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitBC556 -80VCBO Collector-Base Voltage BC557 -50 V BC558 -30BC556 -6

SEMICONDUCTOR BC556/7/8TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .B CFEATURESFor Complementary With NPN Type BC546/547/548.N DIM MILLIMETERSA 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_H J 14.00 + 0.50BC556 -80K 0.55 M

BC556/557/558(PNP)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features High Voltage Complement to BC546/BC547/BC548 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC556 -80 VCBO BC557 -50 V BC558 -30-65 -45 V VCEO Collector-Emitter Voltage -30 Dimensions in inches and (millimeter

BC556, A/BBC557, A/B/CBC558, A/B/CPNP General Purpose TransistorCOLLECTOR3P b Lead(Pb)-Free2BASE1231EMITTERTO-92Maximum Ratings ( T =25 C unless otherwise noted)ARating Symbol BC556 BC557 BC558 UnitV -65 -45Collector-Emitter Voltage ECO -30V-30VCollector-Base Voltage CBO -80 -50 VVEBOEmitter-Base Voltage -5 -5 -5 Vl 100Collector Curre

DIP Type TransistorsPNP TransistorsBC556 ~ BC558 (KC556 ~ KC558)Unit:mmTO-924.8 0.3 3.8 0.3 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-65V/-45V/-30V0.60 Max0.45 0.1 0.5COLLECTOR121 321.CollectorBASE2.Base1.273.Emitter2.543EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol BC556