BC556BP Datasheet, Equivalent, Cross Reference Search
Type Designator: BC556BP
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 240
Noise Figure, dB: -
Package: TO92
BC556BP Transistor Equivalent Substitute - Cross-Reference Search
BC556BP Datasheet (PDF)
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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BC556B, BC557A, B, C,BC558BAmplifier TransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGS 2BASERating Symbol Value UnitCollector - Emitter Voltage VCEO Vdc3BC556 -65EMITTERBC557 -45BC558 -30Collector - Base Voltage VCBO VdcBC556 -80BC557 -50BC558 -30TO-92Emitter - Base Voltage VEBO -5.0 Vdc CASE
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BC556xBK ... BC559xBKBC556xBK ... BC559xBKGeneral Purpose Si-Epitaxial PlanarTransistorsPNP PNPSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2009-12-070.1Power dissipation Verlustleistung 500 mW4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gC B EPlastic material has UL classification 94V-0Gehusematerial
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
