BC557AP Specs and Replacement
Type Designator: BC557AP
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 125
Package: TO92
BC557AP Substitution
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BC557AP datasheet
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 3 BC556 -65 EMITTER BC557 -45 BC558 -30 Collector - Base Voltage VCBO Vdc BC556 -80 BC557 -50 BC558 -30 TO-92 Emitter - Base Voltage VEBO -5.0 Vdc CASE... See More ⇒
BC556xBK ... BC559xBK BC556xBK ... BC559xBK General Purpose Si-Epitaxial PlanarTransistors PNP PNP Si-Epitaxial Planar-Transistoren f r universellen Einsatz Version 2009-12-07 0.1 Power dissipation Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Geh usematerial ... See More ⇒
Detailed specifications: BC556, BC556A, BC556AP, BC556B, BC556BP, BC556VI, BC557, BC557A, 2SC2073, BC557B, BC557BP, BC557C, BC557VI, BC558, BC558A, BC558AP, BC558B
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History: DTA144EEFRA
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