All Transistors. BC635-10 Datasheet

 

BC635-10 Datasheet, Equivalent, Cross Reference Search

Type Designator: BC635-10

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 130 MHz

Forward Current Transfer Ratio (hFE), MIN: 63

Noise Figure, dB: -

Package: TO92

BC635-10 Transistor Equivalent Substitute - Cross-Reference Search

 

BC635-10 Datasheet (PDF)

4.1. bc635-637-639.pdf Size:115K _secos

BC635-10
BC635-10

BC635 / BC637 / BC639 NPN Type Elektronische Bauelemente Plastic Encapsulated Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE 4.55±0.2 3.5±0.2 High current transistor 08 0.43+0.07 –0. 1 0.46+0.1 –0. (1.27 Typ. ) 1: Emitter +0.2 1.25–0.2 1 2 3 2: Collector 2.54±0.1 3: Base o MAXIMUM RATINGS (TA=25 C unless otherwise

4.2. bc635-637-639.pdf Size:154K _lge

BC635-10
BC635-10

BC635/637/639(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 100 V VCEO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 80 V Emit

 5.1. bc635 bc637 bc639.pdf Size:116K _motorola

BC635-10
BC635-10

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D High Current Transistors BC635 NPN Silicon BC637 BC639 COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 635 637 639 Rating Symbol Unit CASE 2904, STYLE 14 TO92 (TO226AA) CollectorEmitter Voltage VCEO 45 60 80 Vdc CollectorBase Voltage VCBO 45 60 80 Vdc EmitterBase Voltage VEBO 5.0 Vdc C

5.2. bc635 bc637 bc639.pdf Size:47K _philips

BC635-10
BC635-10

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification 2001 Oct 10 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLICATIONS

 5.3. bc635 bcp54 bcx54.pdf Size:153K _philips

BC635-10
BC635-10

BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistors Rev. 07 4 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC635[2] SOT54 SC-43A TO-92 BC636 BCP54 SOT223 SC-73 - BCP51 BCX54 SOT89 SC-62 TO-243 BCX51 [1] Valid for all available selection

5.4. bc635 bc637 bc639 3.pdf Size:49K _philips

BC635-10
BC635-10

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 12 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLICATIONS

 5.5. bc635.pdf Size:58K _st

BC635-10
BC635-10

BC635 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC635 BC635 TO-92 / Bulk BC635-AP BC635 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS BC636 TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL L

5.6. bc635 bc637 bc639.pdf Size:55K _fairchild_semi

BC635-10
BC635-10

BC635/637/639 Switching and Amplifier Applications Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K? : BC635 45 V : BC637 60 V : BC639 100 V VCES Collector-Emitter Voltage : BC635 45 V : BC637 60 V : B

5.7. bc635 bc636 bc637 bc638 bc639 bc640.pdf Size:115K _cdil

BC635-10
BC635-10

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25?C) BC635 BC637 BC639 DESCRIPTION SYMBOL BC636 BC638 BC640 UNIT VCEO C

Datasheet: 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

 
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