BC635-16 Datasheet, Equivalent, Cross Reference Search

BC635 / BC637 / BC639NPN TypeElektronische BauelementePlastic Encapsulated TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92 FEATURE 4.550.2 3.50.2High current transistor080.43+0.070.10.46+0.10.(1.27 Typ.)1: Emitter+0.21.250.21 2 32: Collector2.540.13: BaseoMAXIMUM RATINGS (TA=25 C unless otherw

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC635/DHigh Current TransistorsBC635NPN SiliconBC637BC639COLLECTOR23BASE1EMITTER1MAXIMUM RATINGS23BC BC

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistorsProduct specification 2001 Oct 10Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLIC

BC635; BCP54; BCX5445 V, 1 A NPN medium power transistorsRev. 07 4 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC635[2] SOT54 SC-43A TO-92 BC636BCP54 SOT223 SC-73 - BCP51BCX54 SOT89 SC-62 TO-243 BCX51[1] Valid for all available sele

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLI

BC635SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentBC635 BC635 TO-92 / BulkBC635-AP BC635 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE ISBC636TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT SMA

BC635/637/639Switching and Amplifier Applications Complement to BC636/638/640TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC635 45 V: BC637 60 V: BC639 100 VVCES Collector-Emitter Voltage : BC635 45 V: BC637 6

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 BC638 BC640 UNITVCE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. EMITTERFEATURES High current transistors 2. COLLECTOR 3. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

BC635/637/639(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 100 VVCEO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 80 V