BC636-16 Datasheet, Equivalent, Cross Reference Search
Type Designator: BC636-16
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
BC636-16 Transistor Equivalent Substitute - Cross-Reference Search
BC636-16 Datasheet (PDF)
bc636-638-640.pdf
BC636/638/640 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92FEATURE4.550.2 3.50.2Power Dissipation: oPCM: 0.83 mW (Tamb=25 C)080.43+0.070.10.46+0.10.(1.27 Typ.)1: Emitter+0.21.250.21 2 32: Collector2.540.13: BaseoMAXIMUM RATINGS (TA
bc636 bc638 bc640.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC636/DHigh Current TransistorsBC636PNP SiliconBC638COLLECTORBC64023BASE1EMITTER1MAXIMUM RATINGS23BC BC
bc636 bcp51 bcx51.pdf
BC636; BCP51; BCX5145 V, 1 A PNP medium power transistorsRev. 08 22 February 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBC636[2] SOT54 SC-43A TO-92 BC635BCP51 SOT223 SC-73 - BCP54BCX51 SOT89 SC-62 TO-243 BCX54[1] Valid for all available
bc636 bc638 bc640 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC636; BC638; BC640PNP medium power transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 07Philips Semiconductors Product specificationPNP medium power transistors BC636; BC638; BC640FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLI
bc636.pdf
BC636SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentBC636 BC636 TO-92 / BulkBC636-AP BC636 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNPTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE ISBC635TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT SMA
bc636 bc638 bc640.pdf
BC636/638/640Switching and Amplifier Applications Complement to BC635/637/639TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC636 -45 V: BC638 -60 V: BC640 -100 VVCES Collector-Emitter Voltage : BC636 -45 V: BC6
bc636.pdf
March 2009BC636PNP Epitaxial Silicon TransistorSwitching and Amplifier Applications Complement to BC635TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K -45 VVCES Collector-Emitter Voltage -45 VVCEO Collector-Emitter Voltage -45 VVEBO Emitter-Base Volt
bc636 bc638 bc640.pdf
BC636/638/640 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS Complement to BC635/637/639TO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC636 VCER -45 Vat RBE=1Kohm :BC638 -60 V:BC640 -100 VCollector Emitter Voltage :BC636 VCES -45 V:BC638 -60 V:BC640 -100 VCollector Emitter Voltage :BC636 VCE
bc636ta.pdf
DATA SHEETwww.onsemi.comPNP Epitaxial SiliconTransistorTO-92-3BC636CASE 135ARBent Lead12Features3 Switching and Amplifier Applications1. Emitter Complement to BC6352. Collector These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3. BaseCompliantMARKING DIAGRAMABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted)P
bc635 bc636 bc637 bc638 bc639 bc640.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 BC638 BC640 UNITVCE
bc636 bc638 bc640.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsBC636 / BC638 / BC640 TRANSISTOR (PNP)TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTORBC636 BC638 BC6403. BASE XXX XXX XXX1 1 1Equivalent Circuit BC636,BC638,BC640=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Co
bc636 bc638 bc640.pdf
BC636/BC638/BC640 Transistor(PNP) 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High current transistors MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC636 -45 BC638 -60 V BC640 -100 VCEO Collector-Emitter Voltage BC636 -45 BC638 -60 V BC640 -80 Dimensions in inches and (millimeters)VEBO Emitter-
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: NSS1C200L | 2SB647A-C | 2SD1048 | ZXTN2020F | BCW66RF | 2STR2160 | CMMT491
History: NSS1C200L | 2SB647A-C | 2SD1048 | ZXTN2020F | BCW66RF | 2STR2160 | CMMT491
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