All Transistors. BC637-10 Datasheet

 

BC637-10 Datasheet, Equivalent, Cross Reference Search

Type Designator: BC637-10

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 130 MHz

Forward Current Transfer Ratio (hFE), MIN: 63

Noise Figure, dB: -

Package: TO92

BC637-10 Transistor Equivalent Substitute - Cross-Reference Search

 

BC637-10 Datasheet (PDF)

5.1. bc637g bc639zl1g.pdf Size:96K _upd

BC637-10
BC637-10

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc BC637 60 1 BC639 80 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1.0 Adc TO-

5.2. bc635 bc637 bc639.pdf Size:116K _motorola

BC637-10
BC637-10

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D High Current Transistors BC635 NPN Silicon BC637 BC639 COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 635 637 639 Rating Symbol Unit CASE 2904, STYLE 14 TO92 (TO226AA) CollectorEmitter Voltage VCEO 45 60 80 Vdc CollectorBase Voltage VCBO 45 60 80 Vdc EmitterBase Voltage VEBO 5.0 Vdc C

 5.3. bc635 bc637 bc639.pdf Size:47K _philips

BC637-10
BC637-10

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification 2001 Oct 10 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLICATIONS

5.4. bc635 bc637 bc639 3.pdf Size:49K _philips

BC637-10
BC637-10

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 12 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLICATIONS

 5.5. bc637 bcp55 bcx55.pdf Size:153K _philips

BC637-10
BC637-10

BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistors Rev. 07 25 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC637[2] SOT54 SC-43A TO-92 BC638 BCP55 SOT223 SC-73 - BCP52 BCX55 SOT89 SC-62 TO-243 BCX52 [1] Valid for all available selectio

5.6. bc635 bc637 bc639.pdf Size:55K _fairchild_semi

BC637-10
BC637-10

BC635/637/639 Switching and Amplifier Applications Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K? : BC635 45 V : BC637 60 V : BC639 100 V VCES Collector-Emitter Voltage : BC635 45 V : BC637 60 V : B

5.7. bc637 bc639 bc63916.pdf Size:92K _onsemi

BC637-10
BC637-10

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features These are Pb-Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc BC637 60 1 BC639 80 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1.0 Adc TO-92 T

5.8. bc635 bc636 bc637 bc638 bc639 bc640.pdf Size:115K _cdil

BC637-10
BC637-10

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25?C) BC635 BC637 BC639 DESCRIPTION SYMBOL BC636 BC638 BC640 UNIT VCEO C

5.9. bc637.pdf Size:28K _kec

BC637-10

SEMICONDUCTOR BC637 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES Complementary to BC638. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 H 0.45 VCBO Collector-Base Voltage 60 V _ H J 14.00 + 0.50 K 0.55 MAX VCEO F F Collector-Emitte

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .

 

 
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