BC651DS Specs and Replacement
Type Designator: BC651DS
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 680
Package: TO92
BC651DS Substitution
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BC651DS datasheet
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Detailed specifications: BC650D, BC650DS, BC650E, BC650S, BC651, BC651C, BC651CS, BC651D, C1815, BC651E, BC651S, BC682, BC682L, BC714, BC714B, BC714BL, BC714C
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