All Transistors. BC807-40LT1 Datasheet

 

BC807-40LT1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC807-40LT1
   SMD Transistor Code: 5C
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT23

 BC807-40LT1 Transistor Equivalent Substitute - Cross-Reference Search

   

BC807-40LT1 Datasheet (PDF)

 0.1. Size:89K  onsemi
sbc807-40lt1g.pdf

BC807-40LT1
BC807-40LT1

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

 0.2. Size:89K  onsemi
bc807-16lt1g bc807-40lt1g.pdf

BC807-40LT1
BC807-40LT1

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

 0.3. Size:205K  onsemi
bc807-16lt1g bc807-25lt1g bc807-40lt1g.pdf

BC807-40LT1
BC807-40LT1

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 0.4. Size:138K  lrc
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf

BC807-40LT1
BC807-40LT1

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN

 0.5. Size:184K  lrc
lbc807-40lt1g.pdf

BC807-40LT1
BC807-40LT1

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8

 0.6. Size:184K  lrc
lbc807-16lt1g lbc807-16lt3g lbc807-25lt1g lbc807-25lt3g lbc807-40lt1g lbc807-40lt3g.pdf

BC807-40LT1
BC807-40LT1

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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