2SB709LT1 Specs and Replacement
Type Designator: 2SB709LT1
SMD Transistor Code: M6
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Package: SOT23
2SB709LT1 Substitution
- BJT ⓘ Cross-Reference Search
2SB709LT1 datasheet
2SB709LT1 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER Package SOT-23 * Complement to 2SD601LT1 * Collector Current Ic= -100mA * Collector-Emitter Voltage Vce= -45V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -50 V PIN 1 2 3 Collector-Emitter Voltage Vceo -45 V STYLE Emitter-Base Voltage Vebo -5... See More ⇒
Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD601A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratin... See More ⇒
Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SD0601A (2SD601A) 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.95) (0.95) packi... See More ⇒
Detailed specifications: 2SB772-O, 2SB772-R, BC846BLT1, BC846BR, BC846BW, BC846BWT1, BC847, BC847A, S8050, 2SB717GP, 2SB772GP, BC847ALT1, BC847AR, BC847AW, BC847AWT1, BC847B, 2SB857-D
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