2SB891F PDF and Equivalents Search

 

2SB891F Specs and Replacement

Type Designator: 2SB891F

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: TO126

 2SB891F Substitution

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2SB891F datasheet

 ..1. Size:99K  inchange semiconductor

2sb891f.pdf pdf_icon

2SB891F

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F DESCRIPTION With TO-126 package Complement to type 2SD1189F Low collector saturation voltage APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL ... See More ⇒

 8.1. Size:213K  inchange semiconductor

2sb891.pdf pdf_icon

2SB891F

isc Silicon PNP Power Transistor 2SB891 DESCRIPTION High Collector Current -I = -2A C Good Linearity of h FE Low Collector Saturation Voltage Complement to Type 2SD1189 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stage of audio amplifier, voltage regulator,DC-DC converter and relay driver. AB... See More ⇒

 9.1. Size:86K  1

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2SB891F

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 9.2. Size:81K  1

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2SB891F

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Detailed specifications: BC847ALT1, BC847AR, BC847AW, BC847AWT1, BC847B, 2SB857-D, 2SB861-B, 2SB861-C, 2N3906, 2SB963-Z, BC847BLT1, BC847BR, BC847BW, BC847BWT1, BC847C, BC847CLT1, BC847CR

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History: UN921CJ | 2SC3457L | UN921M

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