2SB647L-D Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB647L-D
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO92L
2SB647L-D Transistor Equivalent Substitute - Cross-Reference Search
2SB647L-D Datasheet (PDF)
2sb647l-d.pdf
MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SB647LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Complian
2sb647l-c.pdf
MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SB647LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Complian
2sb647l-b.pdf
MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SB647LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Complian
2sb647-b.pdf
2SB647(A)-BMCCMicro Commercial ComponentsTM2SB647(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB647-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation.Plastic-Encapsulate Collector-current -1.0A
2sb647-d.pdf
2SB647(A)-BMCCMicro Commercial ComponentsTM2SB647(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB647-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation.Plastic-Encapsulate Collector-current -1.0A
2sb647-c.pdf
2SB647(A)-BMCCMicro Commercial ComponentsTM2SB647(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB647-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation.Plastic-Encapsulate Collector-current -1.0A
2sb647.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL APPLICATION * Low frequency power amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB647L-x-T9N-B 2SB647G-x-T9N-B TO-92NL E C B Tape Box 2SB647L-x-T9N-K 2SB647G-x-T9N-K TO-92NL E C B Bulk www.unisonic.com.tw 1 of 4
2sb647.pdf
2SB647, 2SB647ASilicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD667/AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SB647, 2SB647AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SB647 2SB647A UnitCollector to base voltage VCBO 120 120 VCollector to emitter voltage VCEO 80 100 VEmitter to base volt
2sb647.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate TransistorsTO 92L 2SB647 TRANSISTOR (PNP)1. EMITTER2. COLLECTORFEATURES Low Frequency Power Amplifier3. BASE Complementary Pair with 2SD667 Equivalent Circuit B647=Device code B647Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING
2sb647 2sb647a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors J C T TO 92M TO 92MOD 2SB647/2SB647A TRANSISTOR (PNP) 1. COLLECTOR 1. EMITTER 2. BASE FEATURES 2. COLLECTOR Low Frequency Power Amplifier 3. EMITTER Complementary Pair with 2SD667/A 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Va
2sb647 a.pdf
2SB647 / 2SB647APNP General Purpose Transistors2P b Lead(Pb)-Free13231.EMITTER3.BASE2.COLLECTOR1TO-92MODMAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage80VCEOVVCBOCollector-Base Voltage 120 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 1000 mATotal Device DissipationPD900 mWTA=25CTj CJunc
2sb647 2sb647a.pdf
2SB647(A) Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features 2SD667(A)Complementary pair with 2SD667(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P
2sb647a-b.pdf
2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR :, 2SD667(3DG667)/2SD667A(3DG667A) Purpose: Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO-120 V 2SB647 -80
2sb647a-c.pdf
2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR :, 2SD667(3DG667)/2SD667A(3DG667A) Purpose: Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO-120 V 2SB647 -80
2sb647.pdf
SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDSOT-89 Plastic-Encapsulate Transistors 2SB647 TRANSISTOR (PNP) SOT-89-3L FEATURE Power dissipation 1. BASE PCM: 0.9 W (Tamb=25) 2. COLLECTOR 1 Collector current 2 ICM: -1 A 3. EMITTER 3 Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
