BC848AWT1 Specs and Replacement
Type Designator: BC848AWT1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: SOT323
BC848AWT1 Substitution
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BC848AWT1 datasheet
BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 Pb-Free Packages are Available BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-7... See More ⇒
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LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATIO... See More ⇒
LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon We declare that the material of product compliance with RoHS requirements. CWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free... See More ⇒
Detailed specifications: 2SB647L-B, 2SB647L-C, 2SB647L-D, 2SB649AM, 2SB649AM-A, BC848ALT1, BC848AR, BC848AW, BC558, BC848B, BC848BLT1, BC848BR, BC848BW, BC848BWT1, BC848C, BC848CLT1, BC848CR
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