BC850CWT1 Specs and Replacement
Type Designator: BC850CWT1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 520
Package: SOT323
BC850CWT1 Substitution
- BJT ⓘ Cross-Reference Search
BC850CWT1 datasheet
BC847...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011) 1 BC847BL3 is not qualified according AEC Q101 Type Marking Pin ... See More ⇒
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BC846AW BC850CW NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER VOLTAGE 250 mWatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic Terminals Solderable per... See More ⇒
BC846AW-AU BC850CW-AU NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER 250 mWatt VOLTAGE FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic ... See More ⇒
Detailed specifications: BC850BLT1, BC850BR, BC850BW, BC850BWT1, BC850C, BC850CLT1, BC850CR, BC850CW, D882P, BC856, BC856A, BC856ALT1, BC856AR, BC856AW, BC856AWT1, BC856B, BC856BLT1
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