BC857AWT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: BC857AWT1
SMD Transistor Code: 3E
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT323
BC857AWT1 Transistor Equivalent Substitute - Cross-Reference Search
BC857AWT1 Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconCWT1GThese transistors are designed for general purposeLBC858AWT1G, BWT1Gamplifier applications. They are housed in the SOT323/SC70 which is designed for low power surface mount CWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesS-LBC857AWT1G, BWT1GWe declare that the
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC856AWT1/DGeneral Purpose TransistorsBC856AWT1,BWT1PNP SiliconBC857AWT1,BWT1COLLECTOR BC858AWT1,BWT1,These transistors are designed for general purpose amplifier3applications. They are housed in the SOT323/SC70 which is CWT1designed for low power surface mount applications.1Motorola Preferred DevicesB
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