All Transistors. BC858AW Datasheet

 

BC858AW Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC858AW
   SMD Transistor Code: 3J_3J-_3Js_3Jt_3JW_K3A_K3J_K3V
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: SOT323

 BC858AW Transistor Equivalent Substitute - Cross-Reference Search

   

BC858AW Datasheet (PDF)

 ..1. Size:778K  mcc
bc856aw bc856bw bc857aw bc857bw bc857cw bc858aw bc858bw bc858cw.pdf

BC858AW
BC858AW

BC856AW THRU BC858CWFeatures Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Tempera

 ..2. Size:546K  wietron
bc856aw bc857aw bc858aw.pdf

BC858AW
BC858AW

BC856AW/BWBC857AW/BWBC858AW/BW/CWCOLLECTORGeneral Purpose Transistor 33PNP Silicon11P b Lead(Pb)-FreeBASE22EMITTERSOT-323(SC-70)MaximumRatings (TA=25Cunless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage BC856 -65VCEOBC857 -45 VBC858 -30Collector-Base Voltage BC856 -80VCBOBC857 -50 VBC858 -30Emitter-Base Voltage BC856 -5.0

 ..3. Size:143K  panjit
bc856aw bc856bw bc857aw bc857bw bc857cw bc858aw bc858bw bc858cw.pdf

BC858AW
BC858AW

BC856AW ~ BC859CWPNP GENERAL PURPOSE TRANSISTORS30/45/65 Volts POWER 250 mWattsVOLTAGEFEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = 100mA Complimentary (NPN) Devices : BC846AW/BC847AW/BC848AW/BC849BW Series Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC

 ..4. Size:276K  cn yangzhou yangjie elec
bc856aw bc856bw bc857aw bc857bw bc857cw bc858aw bc858bw bc858cw.pdf

BC858AW
BC858AW

RoHS RoHSCOMPLIANT COMPLIANTBC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingHalogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-

 ..5. Size:283K  cn yangzhou yangjie elec
bc856aw bc856bw bc857aw bcb57bw bc857cw bc858aw bc858bw bc858cw.pdf

BC858AW
BC858AW

RoHS RoHSCOMPLIANT COMPLIANTBC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingMoisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Termina

 0.1. Size:251K  motorola
bc856awt bc857awt bc858awt.pdf

BC858AW
BC858AW

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC856AWT1/DGeneral Purpose TransistorsBC856AWT1,BWT1PNP SiliconBC857AWT1,BWT1COLLECTOR BC858AWT1,BWT1,These transistors are designed for general purpose amplifier3applications. They are housed in the SOT323/SC70 which is CWT1designed for low power surface mount applications.1Motorola Preferred DevicesB

 0.2. Size:81K  onsemi
bc858awt1g bc856bwt1g.pdf

BC858AW
BC858AW

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 0.3. Size:143K  onsemi
bc856bwt1 bc857bwt1 bc858awt1-series.pdf

BC858AW
BC858AW

BC856BWT1 Series,BC857BWT1 Series,BC858AWT1 SeriesGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3These transistors are designed for general purpose amplifierapplications. They are housed in the SC--70/SOT--323 which isdesigned for low power surface mount applications. 1BASEFeatures These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS2

 0.4. Size:78K  onsemi
bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdf

BC858AW
BC858AW

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 0.5. Size:444K  secos
bc856aw-bc857aw-bc858aw.pdf

BC858AW
BC858AW

BC856AW, BWBC857AW, BW, CWElektronische BauelementeBC858AW, BW, CWRoHS Compliant ProductFEATURES* Ideally suited for automatic insertion * For Switching and AF Amplifier Applications SOT-323O O* Operating Temp. : -55 C ~ +150 C Dim Min MaxAA 1.800 2.200LB 1.150 1.350C OLLE C TOR 3C 0.800 1.000STop View3 B12 D 0.300 0.400G 1.200 1.4001V GH 0.000 0.

 0.6. Size:279K  lge
bc856aw-bw bc857aw-bw-cw bc858aw-bw-cw.pdf

BC858AW
BC858AW

BC856AW,BWBC857AW,BW,CWBC858AW,BW,CW STO-323 Transistor(PNP)1. BASE 2. EMITTER SOT-3233. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage BC856W -80 VCBO V BC857W -50 Dimensions in inches and (millimeters)

 0.7. Size:254K  lrc
lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdf

BC858AW
BC858AW

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product

 0.8. Size:140K  comchip
bc858aw-g bc857aw-g.pdf

BC858AW
BC858AW

Small Signal TransistorBC856AW-G Thru. BC858CW-G (PNP)RoHS DeviceFeatures -Ideally suited for automatic insertion -For Switching and AF Amplifier ApplicationsSOT-323 -Power dissipationPCM: 0.15W (@TA=25C)0.087 (2.20)0.079 (2.00) -Collector current3ICM: -0.1A -Collector-base voltage0.053(1.35)0.045(1.15)VCBO: BC856W= -80VBC857W= -50V1 20.006 (0.15)BC85

 0.9. Size:253K  cn yangzhou yangjie elec
bc856awq bc856bwq bc857awq bc857bwq bc857cwq bc858awq bc858bwq bc858cwq.pdf

BC858AW
BC858AW

RoHS RoHSCOMPLIANT COMPLIANTBC856AWQ THRU BC858CWQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications PNP General purpose switching and amplification Mechanical Data Case: SOT-323 Terminals: Tin plated

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BD264A | MRF10120 | BFS95

 

 
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