All Transistors. BC859CW Datasheet

 

BC859CW Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC859CW
   SMD Transistor Code: 4C-_4Cs_4Ct
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: SOT323

 BC859CW Transistor Equivalent Substitute - Cross-Reference Search

   

BC859CW Datasheet (PDF)

 ..1. Size:178K  nxp
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.1. Size:350K  nxp
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.2. Size:140K  infineon
bc856a bc856b bc856bw bc857a bc857b bc857bf bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bl3 bc858bw bc858c bc858cw bc859b bc859c bc860b bc860bw bc860cw.pdf

BC859CW BC859CW

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 8.3. Size:861K  infineon
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BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin

 8.4. Size:148K  onsemi
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BC859CW BC859CW

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

 8.5. Size:209K  onsemi
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BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

 8.6. Size:215K  onsemi
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.7. Size:159K  lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdf

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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 8.8. Size:234K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdf

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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 8.9. Size:158K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859clt1g.pdf

BC859CW BC859CW

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit

 8.10. Size:234K  lrc
lbc858alt1g lbc858alt1g lbc858blt1g lbc858blt3g lbc858clt1g lbc858clt3g lbc859blt1g lbc859blt1g lbc859clt1g lbc859clt3g.pdf

BC859CW BC859CW

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 8.11. Size:176K  panjit
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BC856 SERIESPNP GENERAL PURPOSE TRANSISTORSPOWER 330 mWattVOLTAGE 30/45/65 VoltFEATURES0.120(3.04) General Purpose Amplifier Applications0.110(2.80) Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849Series Lead free in compliance with EU RoHS 2011/65/EU directive0.056(1.40)0.047(1.20) Green molding compound as per IEC61

 8.12. Size:781K  anbon
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BC856A/B-BC857A/B/CBC858A/B/C-BC859B/CGeneral Purpose TransistorPNP Silicon Package outlineFeatures Moisture sensitivity level: 1SOT-23 ESD rating human body model: >4000 V,machine model: >400 V Epitaxial plana chip construction Ideal for medium power application and switching Capable of 225mW power dissipation. Lead-free parts for green partner, ex

 8.14. Size:3051K  cn twgmc
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BC856 THRU BC860BC856 THRU BC860BC856 THRU BC860BC8 56 THRU BC8 60 TRANSISTOR(PNP)FEATURESSwitching and Amplifier Applications SOT-23 Suitable for automatic insertion in thick and thin-film circuits1BASE Low Noise: BC859, BC8602EMITTER 3COLLECTOR Complement to BC846 ... BC850MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collec

 8.15. Size:409K  cn cbi
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BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications1.BASE 2.EMITTER 3.COLLECTORSOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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