All Transistors. BC860B Datasheet

 

BC860B Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC860B
   SMD Transistor Code: 4F_4Fp_4Fs_4Ft_4FW_9EB
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 290
   Noise Figure, dB: -
   Package: SOT23

 BC860B Transistor Equivalent Substitute - Cross-Reference Search

   

BC860B Datasheet (PDF)

 ..1. Size:350K  nxp
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BC860B BC860B

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..2. Size:140K  infineon
bc856a bc856b bc856bw bc857a bc857b bc857bf bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bl3 bc858bw bc858c bc858cw bc859b bc859c bc860b bc860bw bc860cw.pdf

BC860B BC860B

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 ..3. Size:861K  infineon
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BC860B BC860B

BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin

 ..5. Size:3051K  cn twgmc
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BC860B BC860B

BC856 THRU BC860BC856 THRU BC860BC856 THRU BC860BC8 56 THRU BC8 60 TRANSISTOR(PNP)FEATURESSwitching and Amplifier Applications SOT-23 Suitable for automatic insertion in thick and thin-film circuits1BASE Low Noise: BC859, BC8602EMITTER 3COLLECTOR Complement to BC846 ... BC850MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collec

 ..6. Size:409K  cn cbi
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BC860B BC860B

BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications1.BASE 2.EMITTER 3.COLLECTORSOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -

 0.1. Size:178K  nxp
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BC860B BC860B

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.2. Size:215K  onsemi
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BC860B BC860B

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:51K  philips
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BC860B BC860B

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC859; BC860PNP general purpose transistors1999 May 28Product specificationSupersedes data of 1998 Jul 16Philips Semiconductors Product specificationPNP general purpose transistors BC859; BC860FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS

 9.2. Size:51K  philips
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BC860B BC860B

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187BC859W; BC860WPNP general purpose transistors1999 Apr 12Product specificationSupersedes data of 1997 Sep 03Philips Semiconductors Product specificationPNP general purpose transistors BC859W; BC860WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATI

 9.3. Size:131K  philips
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BC860B BC860B

DISCRETE SEMICONDUCTORS DATA SHEETBC859; BC860PNP general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 May 28 NXP Semiconductors Product data sheetPNP general purpose transistors BC859; BC860FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector Low noise inpu

 9.4. Size:122K  philips
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BC860B BC860B

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D187BC859W; BC860WPNP general purpose transistorsProduct data sheet 1999 Apr 12Supersedes data of 1997 Sep 03 NXP Semiconductors Product data sheetPNP general purpose transistors BC859W; BC860WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3

 9.5. Size:144K  fairchild semi
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BC860B BC860B

August 2006BC856- BC860tmPNP Epitaxial Silicon TransistorFeatures Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits3 Low Noise: BC859, BC860 Complement to BC846 ... BC850 2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO

 9.6. Size:56K  samsung
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BC860B BC860B

PNP EPITAXIALBC856/857/858/859/860 SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC859, BC860 Complement to BC846 ... BC850ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO:BC856 -80 V:BC857/860 -50 V:BC858/859 -30 VCollecto

 9.7. Size:273K  siemens
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BC860B BC860B

PNP Silicon AF Transistors BC 856W ... BC 860WFeatures For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W,BC 849W, BC 850W (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 856 AW 3As Q62702-C2335 B E C SOT-323BC 856

 9.8. Size:271K  siemens
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BC860B BC860B

PNP Silicon AF Transistors BC 856 ... BC 860Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,BC 849, BC 850 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 856 A 3As Q62702-C1773 B E C SOT-23BC 856 B 3Bs Q6

 9.9. Size:35K  diodes
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BC860B BC860B

SOT23 PNP SILICON PLANAR BC856 BC857BC858 BC859GENERAL PURPOSE TRANSISTORSBC860 ISSUE 6 - APRIL 1997 T I D T I T T E 8 8 8 8 8 C 8 8 8 8 8 8 8 8 8 8B 8 8 8 8 8 8 8 8 SOT23 8 8 8 8 8 8 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I I I I I Di i i T i T T T ELECTRICAL CH

 9.10. Size:140K  infineon
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BC860B BC860B

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 9.11. Size:41K  kec
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BC860B BC860B

SEMICONDUCTOR BC859/860TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LFor Complementary with NPN Type BC849/850DIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX2MAXIMUM RATING (Ta=25 ) 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201CHARACTERISTIC SYMBOL RATING UNITG 1.90H 0.95BC859 -30 J 0.13+0.10/-0.05

 9.12. Size:173K  semtech
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BC860B BC860B

BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -VCEO 30 V Emitter Base Volt

 9.13. Size:1161K  kexin
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BC860B BC860B

SMD Type TransistorsPNP TransistorsBC859~BC860 (KC859~KC860)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 45 V). NPN complements: BC849 and BC850.1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

 9.14. Size:956K  kexin
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BC860B BC860B

SMD Type TransistorsPNP TransistorsBC859W,BC860W(KC859W,KC860W) Features Low current (max. 100 mA) Low voltage (max. 45 V). Complements to BC849W and BC850W.CB1.Base2.EmitterE3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC859W -30 Collector - Base Voltage VCBOBC860W -50BC859W -30 V Collector - Emitter Voltag

 9.15. Size:748K  cn twgmc
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BC860B BC860B

BC856-BC860BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications1.BASE 2.EMITTER 3.COLLECTORSOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V B

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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