2N2770 Specs and Replacement
Type Designator: 2N2770
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO61
2N2770 Substitution
- BJT ⓘ Cross-Reference Search
2N2770 datasheet
Detailed specifications: 2N2763, 2N2764, 2N2765, 2N2766, 2N2767, 2N2768, 2N2769, 2N277, TIP2955, 2N2771, 2N2772, 2N2773, 2N2774, 2N2775, 2N2776, 2N2777, 2N2778
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