BCP29 Specs and Replacement
Type Designator: BCP29
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 20000
Package: SOT223
BCP29 Substitution
- BJT ⓘ Cross-Reference Search
BCP29 datasheet
NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications High collector current High current gain Complementary types BCP 28/48 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) BCP 29 BCP 29 Q62702-C2136 SOT-223 BCP 49 BCP 49 Q62702-C2137 Maximum Ratings Parameter Symbol Values Unit BCP 29 BCP 49 Collector-emitter voltage VCE0 3... See More ⇒
Detailed specifications: BCF81R, BCF92, BCF92B, BCF92C, BCF93, BCF93B, BCF93C, BCP28, BC327, BCP48, BCP49, BCP51, BCP51-10, BCP51-16, BCP51T1, BCP51T3, BCP52
Keywords - BCP29 pdf specs
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