BCP49 Specs and Replacement
Type Designator: BCP49
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 10000
Package: SOT223
BCP49 Substitution
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BCP49 datasheet
NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications High collector current High current gain Complementary types BCP 28/48 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) BCP 29 BCP 29 Q62702-C2136 SOT-223 BCP 49 BCP 49 Q62702-C2137 Maximum Ratings Parameter Symbol Values Unit BCP 29 BCP 49 Collector-emitter voltage VCE0 3... See More ⇒
BCP49 NPN Silicon Darlington Transistors For general AF applications High collector current 4 3 High current gain 2 1 Pb-free (RoHS compliant) package1) Qualified according AEC Q101 C(2,4) B(1) E(3) EHA00009 Type Marking Pin Configuration Package BCP49 BCP 49 1 = B 2 = C 3 = E 4 = C SOT223 Maximum Ratings Parameter Symbol Values Unit Collector-emitter volt... See More ⇒
Detailed specifications: BCF92B, BCF92C, BCF93, BCF93B, BCF93C, BCP28, BCP29, BCP48, S8550, BCP51, BCP51-10, BCP51-16, BCP51T1, BCP51T3, BCP52, BCP52-10, BCP52-10T1
Keywords - BCP49 pdf specs
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