All Transistors. BCP69T1 Datasheet

 

BCP69T1 Datasheet and Replacement


   Type Designator: BCP69T1
   SMD Transistor Code: CE
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 45 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: SOT223
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BCP69T1 Datasheet (PDF)

 0.1. Size:71K  motorola
 bcp69t1rev2.pdf pdf_icon

BCP69T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP69T1/DBCP69T1PNP SiliconMotorola Preferred DeviceEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in low voltage, high currentMEDIUM POWERapplications. The device is housed in the SOT-223 package, which is designed forPNP SILICONmedium power surface mount applications.HIGH CURRENT

 0.2. Size:126K  onsemi
 bcp69t1g nsvbcp69t1g.pdf pdf_icon

BCP69T1

BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered

 0.3. Size:89K  onsemi
 bcp69t1g.pdf pdf_icon

BCP69T1

BCP69T1Preferred Device PNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223-4 package, which is designed for medium power surfacehttp://onsemi.commount applications. High Current: IC = -1.0 AMEDIUM POWER The SOT-223-4 Package can be soldered using wave or

 0.4. Size:122K  onsemi
 nsvbcp69t1g.pdf pdf_icon

BCP69T1

BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered

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Keywords - BCP69T1 transistor datasheet

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