BCP69T1 Specs and Replacement

Type Designator: BCP69T1

SMD Transistor Code: CE

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: SOT223

 BCP69T1 Substitution

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BCP69T1 datasheet

 0.1. Size:71K  motorola

bcp69t1rev2.pdf pdf_icon

BCP69T1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP69T1/D BCP69T1 PNP Silicon Motorola Preferred Device Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current MEDIUM POWER applications. The device is housed in the SOT-223 package, which is designed for PNP SILICON medium power surface mount applications. HIGH CURRENT... See More ⇒

 0.2. Size:126K  onsemi

bcp69t1g nsvbcp69t1g.pdf pdf_icon

BCP69T1

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered... See More ⇒

 0.3. Size:89K  onsemi

bcp69t1g.pdf pdf_icon

BCP69T1

BCP69T1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223-4 package, which is designed for medium power surface http //onsemi.com mount applications. High Current IC = -1.0 A MEDIUM POWER The SOT-223-4 Package can be soldered using wave or... See More ⇒

 0.4. Size:122K  onsemi

nsvbcp69t1g.pdf pdf_icon

BCP69T1

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered... See More ⇒

Detailed specifications: BCP627C, BCP628A, BCP628B, BCP628C, BCP68, BCP68T1, BCP68T3, BCP69, D882P, BCP69T3, BCR08PN, BCR108, BCR108S, BCR108W, BCR10PN, BCR112, BCR116

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