BCR116W
Datasheet, Equivalent, Cross Reference Search
Type Designator: BCR116W
SMD Transistor Code: WGs
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 160
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT323
BCR116W
Transistor Equivalent Substitute - Cross-Reference Search
BCR116W
Datasheet (PDF)
..1. Size:34K siemens
bcr116w.pdf
BCR 116WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 116W WGs UPON INQUIRY 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-ba
..2. Size:867K infineon
bcr116 bcr116s bcr116w.pdf
BCR116...NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7 k, R2=47 k) BCR116S: Two internally isolated transistors with good matching in one multichip package BCR116S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified accordin
8.1. Size:35K siemens
bcr116.pdf
BCR 116NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 116 WGs Q62702-C2337 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base
8.2. Size:865K infineon
bcr116s.pdf
BCR116...NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7 k, R2=47 k) BCR116S: Two internally isolated transistors with good matching in one multichip package BCR116S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified accordin
9.1. Size:34K siemens
bcr119.pdf
BCR 119NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 119 WKs Q62702-C2255 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage VEB
9.2. Size:34K siemens
bcr119w.pdf
BCR 119WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 119W WKs Q62702-C2285 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage
9.3. Size:35K siemens
bcr112.pdf
BCR 112NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 112 WFs Q62702-C2254 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base
9.4. Size:34K siemens
bcr112w.pdf
BCR 112WNPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 112W WFs Q62702-C2284 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-b
9.5. Size:42K siemens
bcr119s.pdf
BCR 119SNPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in one package Built bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 119S WKs Q62702-C2415 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values UnitCollecto
9.6. Size:250K infineon
bcr119w.pdf
BCR119...NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k) BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR
9.7. Size:834K infineon
bcr112w.pdf
BCR112...NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=4.7k) Pb-free (RoHS compliant) package Qualified according AEC Q101BCR112BCR112WC3R1R21 2B EEHA07184Type Marking Pin Configuration PackageBCR112 WFs 1=B 2=E 3=C - - - SOT23 BCR112W WFs 1=B 2=E 3=C - - - S
9.8. Size:250K infineon
bcr119f.pdf
BCR119...NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k) BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR
9.9. Size:253K infineon
bcr119series.pdf
BCR119...NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k) BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.