BCR519 Datasheet, Equivalent, Cross Reference Search
Type Designator: BCR519
SMD Transistor Code: XKs
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.33 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT23
BCR519 Transistor Equivalent Substitute - Cross-Reference Search
BCR519 Datasheet (PDF)
bcr519.pdf
BCR 519NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 519 XKs UPON INQUIRY 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage VEB
bcr512.pdf
BCR 512NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, drive circuit Built in bias resistor (R1=4.7k, R2=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 512 XFs Q62702-C2445 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base
bcr512.pdf
BCR512NPN Silicon Digital Transistor Built in bias resistor (R1= 4.7 k, R2= 4.7 k)23 Pb-free (RoHS compliant) package1 Qualified according AEC Q101C3R1R21 2B EEHA07184Type Marking Pin Configuration PackageBCR512 XFs SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit50 VCollector-emitter voltage VCEO50Collector-base voltage V
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N3124 | BCW44 | 2N965
