BCV29 Datasheet, Equivalent, Cross Reference Search
Type Designator: BCV29
SMD Transistor Code: ED_EF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 20000
Noise Figure, dB: -
Package: SOT89
BCV29 Transistor Equivalent Substitute - Cross-Reference Search
BCV29 Datasheet (PDF)
bcv29 bcv49 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BCV29; BCV49NPN Darlington transistors1999 Apr 08Product specificationSupersedes data of 1997 Apr 21Philips Semiconductors Product specificationNPN Darlington transistors BCV29; BCV49FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 60 V)1 emitter High DC current gain (min.
bcv29 bcv49.pdf
NPN Silicon Darlington Transistors BCV 29BCV 49 For general AF applications High collector current High current gain Complementary types: BCV 28, BCV 48 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BCV 29 EF Q62702-C1853 B C E C SOT-89BCV 49 EG Q62702-C1832Maximum RatingsParameter Symbol Values UnitBCV 29 BCV 49Collector-emitter vol
bcv29 bcv49.pdf
BCV29, BCV49NPN Silicon Darlington Transistors1 For general AF applications2 High collector current 32 High current gain Complementary types: BCV28, BCV48 (PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageBCV29 EF 1=B 2=C 3=E SOT89 BCV49 EG 1=B 2=C 3=E SOT89Maximum RatingsParameter Symbol Va
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
