All Transistors. 2SB1669-Z Datasheet

 

2SB1669-Z Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1669-Z
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO252

 2SB1669-Z Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1669-Z Datasheet (PDF)

 ..1. Size:253K  renesas
2sb1669-z.pdf

2SB1669-Z
2SB1669-Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 ..2. Size:210K  inchange semiconductor
2sb1669-z.pdf

2SB1669-Z
2SB1669-Z

isc Silicon PNP Power Transistor 2SB1669-ZDESCRIPTIONHigh DC current amplifier rateh 100@VCE=-5V,IC=-0.5AFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB1669-Z is a power transistor that can be directly drivenfrom the output of an IC.This transistor is ideal for OA and FAequipment such as

 7.1. Size:253K  renesas
2sb1669.pdf

2SB1669-Z
2SB1669-Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.2. Size:138K  nec
2sb1669.pdf

2SB1669-Z
2SB1669-Z

DATA SHEETSILICON POWER TRANSISTOR2SB1669PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SB1669 is a power transistor that can be directly driven from ORDERING INFORMATIONthe output of an IC. This transistor is ideal for OA and FA equipmentPart No. Packagesuch as motor and solenoid drivers.2SB1669 TO-220AB2SB1669-S TO-262FEATURES2SB1669-Z TO-220SMD High

 7.3. Size:212K  inchange semiconductor
2sb1669.pdf

2SB1669-Z
2SB1669-Z

isc Silicon PNP Power Transistor 2SB1669DESCRIPTIONHigh DC current amplifier rateh 100@VCE=-5V,IC=-0.5AFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB1669-Z is a power transistor that can be directly drivenfrom the output of an IC.This transistor is ideal for OA and FAequipment such as motor and solenoid drivers

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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