BCW30LT3 Specs and Replacement
Type Designator: BCW30LT3
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 215
Package: TO236
BCW30LT3 Substitution
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BCW30LT3 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW29LT1/D General Purpose Transistors BCW29LT1 PNP Silicon COLLECTOR BCW30LT1 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 32 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 32 Vdc SOT 23 (TO 236AB) Emitter Base Voltage VEBO 5.0 Vdc ... See More ⇒
BCW30LT1G General Purpose Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector - Emitter Voltage VCEO -32 Vdc Collector - Base Voltage VCBO -32 Vdc Emitter-Base Voltage VEBO -5.0 Vdc 3 Collector Current - Continuous IC -100 ... See More ⇒
BCW30LT1 General Purpose Transistors PNP Silicon http //onsemi.com Features Pb-Free Packages are Available COLLECTOR 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO -32 Vdc 2 EMITTER Collector - Base Voltage VCBO -32 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -100 mAdc 3 THERMAL CHARACTERISTICS Characteris... See More ⇒
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Detailed specifications: BCW29, BCW29CSM, BCW29LT1, BCW29LT3, BCW29R, BCW30, BCW30CSM, BCW30LT1, 2SD313, BCW30R, BCW31, BCW31CSM, BCW31LT1, BCW31LT3, BCW31R, BCW32, BCW32CSM
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