BCW31LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: BCW31LT1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: TO236
BCW31LT1 Transistor Equivalent Substitute - Cross-Reference Search
BCW31LT1 Datasheet (PDF)
bcw31 bcw32 bcw33 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBCW31; BCW32; BCW33NPN general purpose transistorsProduct data sheet 2004 Feb 06Supersedes data of 2000 Jul 04NXP Semiconductors Product data sheetBCW31; BCW32; NPN general purpose transistorsBCW33FEATURES PINNING Low current (100 mA)PIN DESCRIPTION Low voltage (32 V).1 base2 emitterAPPLICATIONS3 collector General
bcw31 bcw32 bcw33.pdf
DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088BCW31; BCW32; BCW33NPN general purpose transistorsProduct specification 2000 Jul 04Supersedes data of 1999 Apr 13Philips Semiconductors Product specificationNPN general purpose transistors BCW31; BCW32; BCW33FEATURES PINNING Low current (100 mA)PIN DESCRIPTION Low voltage (32 V).1 base2 emitterAPPLICATIONS
bcw31.pdf
BCW31NPN General Purpose Amplifier This device is designed for general purpose applications at collector 3currents to 300mA. Sourced from process 10.2SOT-231Mark: D11. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 32 VVCBO Collector-Base Voltage 32 VVEBO Emitte
bcw31 bcw32 bcw33.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bcw31 bcw32 bcw33.pdf
SOT23 NPN SILICON PLANAR BCW31BCW32SMALL SIGNAL TRANSISTORSBCW33ISSUE 2 - JUNE 1995 T I D T I D D D D E D D C T T BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI i V I V V I V V II i V T V I I i V I V I
bcw31 bcw32 bcw33.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW31 BCW32BCW33SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSBCW31 = DlALL DIMENSIONS IN mmBCW32 = D2BCW33 = D3Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBCW31 BCW32 B
bcw31 bcw32.pdf
SEMICONDUCTORBCW31/32TECHNICAL DATAEPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to BCW29/30._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25)J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTERISTIC SYMBOL RATING
bcw31 bcw32 bcw33.pdf
SMD Type TransistorsNPN TransistorsBCW31~BCW33 (KCW31~KCW33)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Low current (100 mA) Low voltage (32 V).1 2 PNP complements: BCW29 and BCW30.+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .