BCW32LT1 Datasheet and Replacement
Type Designator: BCW32LT1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO236
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BCW32LT1 Datasheet (PDF)
bcw32lt1g.pdf
BCW32LT1GGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emit
nsvbcw32lt1g.pdf
BCW32LT1GGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-E
bcw32lt1-d.pdf
BCW32LT1GGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR31BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emitter Voltage VCEO 32 VdcEMITTERCollector-Base Voltage VCBO 32 VdcEmitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 100 mAdc3S
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N332A | BDW24 | BC847RA | MMBT3906HE3 | 2SB744A | 2N2874 | 2SC3750
Keywords - BCW32LT1 transistor datasheet
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History: 2N332A | BDW24 | BC847RA | MMBT3906HE3 | 2SB744A | 2N2874 | 2SC3750
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