BCW32LT3 Datasheet and Replacement
Type Designator: BCW32LT3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO236
BCW32LT3 Substitution
BCW32LT3 Datasheet (PDF)
bcw32lt1g.pdf
BCW32LT1GGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emit
nsvbcw32lt1g.pdf
BCW32LT1GGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-E
bcw32lt1-d.pdf
BCW32LT1GGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR31BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emitter Voltage VCEO 32 VdcEMITTERCollector-Base Voltage VCBO 32 VdcEmitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 100 mAdc3S
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 3DG4081 | 2N1788 | FJV3105R | 3DG3440
Keywords - BCW32LT3 transistor datasheet
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History: 3DG4081 | 2N1788 | FJV3105R | 3DG3440
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