BCW32LT3 Specs and Replacement
Type Designator: BCW32LT3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO236
BCW32LT3 Substitution
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BCW32LT3 datasheet
BCW32LT1G General Purpose Transistors NPN Silicon Features www.onsemi.com NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emit... See More ⇒
BCW32LT1G General Purpose Transistors NPN Silicon Features http //onsemi.com NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-E... See More ⇒
BCW32LT1G General Purpose Transistors NPN Silicon Features http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 32 Vdc EMITTER Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 100 mAdc 3 S... See More ⇒
Detailed specifications: BCW31, BCW31CSM, BCW31LT1, BCW31LT3, BCW31R, BCW32, BCW32CSM, BCW32LT1, 2SB817, BCW32R, BCW33, BCW33CSM, BCW33LT1, BCW33LT3, BCW33R, BCW34, BCW35
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