BCW33LT3 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BCW33LT3 Specs and Replacement

Type Designator: BCW33LT3

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 420

Noise Figure, dB: -

Package: TO236

BCW33LT3 Substitution

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BCW33LT3 datasheet

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BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features http //onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) MAXIMUM RATINGS CASE 318-08 STYLE 6 Rating Symbol Value U... See More ⇒

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BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features www.onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-23 (TO-236) MAXIMUM RATINGS CASE 318-08 STYLE 6 Rating Symbol Value Unit C... See More ⇒

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