BCW35 Datasheet and Replacement
Type Designator: BCW35
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO18
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BCW35 Datasheet (PDF)
bcw35x.pdf

BCW35XDimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 45V 0.48 (0.019)0.41 (0.016)dia.IC = 0.6A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC4509 | 2SB1188SQ-R | 2SB1118U | DTA144WET1G | MP2832 | 3DF5 | 2SC5197O
Keywords - BCW35 transistor datasheet
BCW35 cross reference
BCW35 equivalent finder
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History: 2SC4509 | 2SB1188SQ-R | 2SB1118U | DTA144WET1G | MP2832 | 3DF5 | 2SC5197O



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