BCW35 Specs and Replacement
Type Designator: BCW35
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO18
BCW35 Substitution
- BJT ⓘ Cross-Reference Search
BCW35 datasheet
BCW35X Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.6A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN... See More ⇒
Detailed specifications: BCW32LT3, BCW32R, BCW33, BCW33CSM, BCW33LT1, BCW33LT3, BCW33R, BCW34, 2SC5198, BCW36, BCW37, BCW38, BCW39, BCW44, BCW45, BCW46, BCW46A
Keywords - BCW35 pdf specs
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