BCW60B Datasheet, Equivalent, Cross Reference Search
Type Designator: BCW60B
SMD Transistor Code: AB_ABp_ABs_ABt_ABW_GAB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO236
BCW60B Transistor Equivalent Substitute - Cross-Reference Search
BCW60B Datasheet (PDF)
bcw60b bcw60c bcw60d.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bcw31 bcw32 bcw33 bcw60a bcw60b bcw60c bcw60d bcw65a bcw65b bcw66f bcw66g bcw71 bcw72 bcx19 bcx20 bcx70g.pdf
bcw60alt.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW60ALT1/DBCW60ALT1General Purpose TransistorsBCW60BLT1NPN SiliconCOLLECTORBCW60DLT131BASE32EMITTER12MAXIMUM RATINGSRating Symbol Value UnitCASE 31808, STYLE 6SOT23 (TO236AB)CollectorEmitter Voltage VCEO 32 VdcCollectorBase Voltage VCBO 32 VdcEmitterBase Voltage VEBO 5.0
bcw60.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088BCW60 seriesNPN general purpose transistorsProduct data sheet 1999 Apr 22Supersedes data of 1997 Mar 10 NXP Semiconductors Product data sheetNPN general purpose transistors BCW60 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS3 coll
bcw60 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCW60 seriesNPN general purpose transistors1999 Apr 22Product specificationSupersedes data of 1997 Mar 10Philips Semiconductors Product specificationNPN general purpose transistors BCW60 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS
bcw60a b c d.pdf
BCW60A/B/C/DGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 350 mW TSTG
bcw60 bcx70.pdf
NPN Silicon AF Transistors BCW 60BCX 70 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCW 60 A AAs Q62702-C1517 B E C SOT-23BCW 60 B ABs Q62702-C1497BCW 60 C ACs Q6270
bcw60 bcx70.pdf
BCW60, BCX70NPN Silicon AF Transistors For AF input stages and driver applications23 High current gain1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCW60B ABs 1=B 2=E 3=C SOT23
bcw60a b c d.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW60A BCW60BBCW60C BCW60DSILICON PLANAR EPITAXIAL TRANSISTORSNPN silicon transistorsMarkingBCW60A = AABCW60B = ABPACKAGE OUTLINE DETAILSBCW60C = ACALL DIMENSIONS IN mmBCW60D = ADPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOL
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .