BCW60DLT1 Specs and Replacement
Type Designator: BCW60DLT1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 380
Package: TO236
BCW60DLT1 Substitution
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BCW60DLT1 datasheet
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW60ALT1/D BCW60ALT1 General Purpose Transistors BCW60BLT1 NPN Silicon COLLECTOR BCW60DLT1 3 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Emitter Voltage VCEO 32 Vdc Collector Base Voltage VCBO 32 Vdc Emitter Base Voltage VEBO 5.0 ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BCW60 series NPN general purpose transistors Product data sheet 1999 Apr 22 Supersedes data of 1997 Mar 10 NXP Semiconductors Product data sheet NPN general purpose transistors BCW60 series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS 3 coll... See More ⇒
Detailed specifications: BCW60, BCW60A, BCW60ALT1, BCW60B, BCW60BLT1, BCW60C, BCW60CLT1, BCW60D, TIP122, BCW60FF, BCW60FN, BCW60RA, BCW60RB, BCW60RC, BCW60RD, BCW61, BCW61ALT1
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History: BTB1184J3S | ISC3244AS1
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