BCW80-10 Datasheet and Replacement

   Type Designator: BCW80-10
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 18 pF
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: TO39
     - BJT ⓘ Cross-Reference Search