BCW83A Datasheet and Replacement

   Type Designator: BCW83A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 125
   Noise Figure, dB: -
   Package: SOT23
     - BJT ⓘ Cross-Reference Search