2N2809 Datasheet and Replacement

   Type Designator: 2N2809
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1500 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO33-1
     - BJT ⓘ Cross-Reference Search