BCY56 Specs and Replacement
Type Designator: BCY56
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO18
BCY56 Substitution
- BJT ⓘ Cross-Reference Search
BCY56 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BCY56 BCY57 TO-18 Metal Can Package For General Purpose, Very High Gain Low Level and Low Noise Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY56 BCY57 UNIT VCEO Collector Emitter Voltage 45 20 V VCBO Collector Base Voltage 45 25 V VEBO Emitter Bas... See More ⇒
Detailed specifications: BCY43P, BCY49, BCY50, BCY50R, BCY51, BCY51R, BCY54, BCY55, 2N5401, BCY57, BCY58, BCY58-10, BCY58-7, BCY58-8, BCY58-9, BCY58A, BCY58AP
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