All Transistors. BCY57 Datasheet

 

BCY57 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BCY57
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO18

 BCY57 Transistor Equivalent Substitute - Cross-Reference Search

   

BCY57 Datasheet (PDF)

 ..1. Size:156K  cdil
 bcy56 bcy57.pdf

BCY57 BCY57

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTORS BCY56BCY57TO-18Metal Can PackageFor General Purpose, Very High Gain Low Level and Low Noise ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BCY56 BCY57 UNITVCEOCollector Emitter Voltage 45 20 VVCBOCollector Base Voltage 45 25 VVEBOEmitter Bas

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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