BCY58-7
Datasheet, Equivalent, Cross Reference Search
Type Designator: BCY58-7
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1
W
Maximum Collector-Base Voltage |Vcb|: 32
V
Maximum Collector-Emitter Voltage |Vce|: 32
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 125
MHz
Collector Capacitance (Cc): 6
pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package:
TO18
BCY58-7
Transistor Equivalent Substitute - Cross-Reference Search
BCY58-7
Datasheet (PDF)
9.1. Size:50K philips
bcy58 bcy59 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D125BCY58; BCY59NPN switching transistors1997 Jun 17Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BCY58; BCY59FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 ba
9.2. Size:99K st
bcy58.pdf
BCY58BCY59LOW NOISE AUDIO AMPLIFIERSDESCRIPTIONThe BCY58 and BCY59 are silicon planar epitaxialNPN transistors in Jedec TO-18 metal case.They are intended for use in audio input stages,driver stages and low-noise input stages. The com-plementary PNP types are respectively the BCY78and BCY79.TO-18INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSValueSymbol Parameter
9.3. Size:94K cdil
bcy58 bcy59.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59TO-18Low Noise Audio Amplifier Input Stages & Driver ApplicationsComplementary BCY78/79ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BCY58 BCY59 UNITSCollector -Emitter Voltage VCEO 32 45 VCollector -Emitter Voltage(RBE=10 ohm
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.