BCY58IX Specs and Replacement
Type Designator: BCY58IX
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.27 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Package: TO18
BCY58IX Substitution
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BCY58IX datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY58; BCY59 NPN switching transistors 1997 Jun 17 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 ba... See More ⇒
BCY58 BCY59 LOW NOISE AUDIO AMPLIFIERS DESCRIPTION The BCY58 and BCY59 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are intended for use in audio input stages, driver stages and low-noise input stages. The com- plementary PNP types are respectively the BCY78 and BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter ... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low Noise Audio Amplifier Input Stages & Driver Applications Complementary BCY78/79 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY58 BCY59 UNITS Collector -Emitter Voltage VCEO 32 45 V Collector -Emitter Voltage(RBE=10 ohm... See More ⇒
Detailed specifications: BCY58AP, BCY58B, BCY58BP, BCY58C, BCY58CP, BCY58CSM, BCY58D, BCY58DP, 13009, BCY58QF, BCY58VII, BCY59, BCY59-10, BCY59-7, BCY59-8, BCY59-9, BCY59A
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