BCY65E Specs and Replacement
Type Designator: BCY65E
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO18
BCY65E Substitution
- BJT ⓘ Cross-Reference Search
BCY65E datasheet
NO PDF data!
Detailed specifications: BCY59BP, BCY59C, BCY59CP, BCY59CSM, BCY59D, BCY59DP, BCY59QF, BCY65, 2SA1837, BCY65E7, BCY65E8, BCY65E9, BCY65EA, BCY65EB, BCY65EC, BCY65EP, BCY65EP-7
Keywords - BCY65E pdf specs
BCY65E cross reference
BCY65E equivalent finder
BCY65E pdf lookup
BCY65E substitution
BCY65E replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
d313 transistor equivalent | 2sb827 | c5200 datasheet | 2n2614 | 2sa777 replacement | 2sc828 transistor | 2sd357 | 110n8f6 mosfet datasheet
