BCY65E8 PDF and Equivalents Search

BCY65E8 Specs and Replacement

Type Designator: BCY65E8

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 125 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO18

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BCY65E8 datasheet

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Detailed specifications: BCY59CP, BCY59CSM, BCY59D, BCY59DP, BCY59QF, BCY65, BCY65E, BCY65E7, TIP35C, BCY65E9, BCY65EA, BCY65EB, BCY65EC, BCY65EP, BCY65EP-7, BCY65EP-8, BCY65EP-9

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